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Product Features


·28-30GHz operation

·+27dBm Psat(0.5W)

·+25dB linear gain

·△Gain:±1dB

·Output  P-1dB:25dBm

·I/O Impedance:50Ω

·Chip Size:3×2×0.1mm3



Diagram

 
 

   

brief introduction

This chip is a 4-stage high power amplifier that provides a typical saturated output power of 27dBm across the frequency band and a typical gain of 25dB. The HPA is fabricated on a 0.15um PHEMT process.





Applications


SATCOM, Point-to-Point Radios





Electrical performanceTA=+2550Ω  systemVD=+6VIdd=0.8A

Parameter

Symbol     

Min

Typical        

Max

Unit 

1 Frequency band

Freq

28

-

30

GHz

2 Gain

Gain

-    

25              

         

dB           

3 Gain flatness

△Gain

-     

±1             

-          

dB              

4 Output  P-1dB

P-1dB        

-

25               

-   

dBm          

5 Input Return loss

IRL           

-

   -12           

-

dB              

6 Output Return loss

ORL           

-

   -18        

-

dB             

7 Saturation out power

Psat           

-

    27             

-

dBm          

8 Bias Voltage-Drain

 Vds           

 6           

V          

9 Bias Current-Drain

Idd            

 2        

A          

10 Operating Rang

-40

 -  

+85

 ℃

11 Chip Size

 -             

-

3×2         

mm2         

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